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电子元件 Electronic Components
TQO-Discrete Transistors:
Part Description Freq (GHz) Gain (dB) IIP3 (dBm) NF/PAE Vd(V)
CLY2 High Power Packaged GaAs FET; +23.5 dBm to 3 14.5   55% 3
CLY5 High Power Packaged GaAs FET; +26.5 dBm to 2.5 9.5   55% 3
TQO-Wireless LAN,Bluetooth:
Part Description POUT (dBm) Efficiency (%)
CGB240 2.4 to 2.5 GHz HBT Bluetooth Power Amplifier 23 50
TQ7125 824-849 MHz, Cellular AMPS/TDMA Power Amp IC-HBT 29.5 47
TQ7135 824-849 MHz Cellular AMPS/CDMA Power Amp IC-SiGe 28.0 40
TQ7625 1850-1910 MHz, PSC TDMA Power Amp IC-HBT 28 40
TQM7136 824-849 MHz 2 Stage Cellular CDMA/AMPS SiGe HBT Power Amplifier Module 28/31.5 35% CDMA, 51% AMPS
TQM7138 824-849 MHz, 2 Stage Cellular CDMA/AMPS SiGe HBT Power Amplifier Module 28/31.5 35% CDMA, 51% AMPS
TQP7M4002 Quad-Band E-GSM/GSM850/DCS/PCS Power Amplifier MMIC; 3V 35.5 58
CGB241 2-Stage Bluetooth & WLAN InGaP HBT Power Amplifier 22.5 47
TQP2420B ISM Band InGaP HBT Power Amplifier 23 (Linear) 35
TQP2420G 2.4 GHz ISM Band InGaP HBT Power Amplifier +23 dBm Linear 35%
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电子元件 Electronic Components

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